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R48S1 AC05DSMA IRG7P IT2005 AO3419 EFM32 DTA144EE TMEGA1
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  Datasheet File OCR Text:
 Transys
Electronics
LIMITED
SOT-89 Plastic-Encapsulated Transistors
2SA1201
FEATURES Power dissipation 2. COLLECTOR PCM : 500 mW (Tamb=25) 3. EMITTER 1 2 3
TRANSISTOR (PNP)
SOT-89
1. BASE
Collector current : -800 mA ICM Collector-base voltage V V(BR)CBO : -120 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE
unless otherwise specified)
Test conditions MIN TYP MAX UNIT V V V
Ic=-1mA, IE=0 Ic=-10mA, IB=0 IE=-1mA, IC=0 VCB=-120V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-500mA VCE=-5V, IC=-100mA VCB=-10V, IE=0, f=1MHz
-120 -120 -5 -0.1 -0.1 80 240 -1 -1 120
30
A A
V V MHz pF
fT
Cob
CLASSIFICATION OF hFE(1) Rank Range Marking O 80-160 DO Y 120-240 DY


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